Com o objetivo de determinar as exigências de energia e proteína para ganho de tourinhos Santa Gertrudes, 33 tourinhos, com idade de 12 meses e peso inicial médio de 314,6±33,2kg, foram confinados durante 115 dias, após 56 dias de adaptação. Seis animais foram abatidos após adaptação, para determinação da composição química corporal inicial. Os animais receberam dietas contendo 80% de concentrado, avaliando-se a inclusão de 0; 4,5; e 9,0% do subproduto concentrado da produção de lisina na matéria seca. As exigências de energia líquida de ganho (ELg) foram estimadas em função do peso de corpo vazio (PCVZ) e do ganho de PCVZ (GPCVZ), e as exigências líquidas de proteína para ganho (PLg) foram estimadas em função do GPCVZ e da energia retida (ER). As equações obtidas para ELg e PLg foram: ELg (Mcal/dia) = 0,0061×PCVZ0,75×GPCVZ0,578; e PLg (g/dia) = 208,1×GPCVZ - 1,0868×ER. A exigência de energia líquida encontrada para ganho de 1kg de PV foi de 3,93; 4,88 e 5,76Mcal, e a exigência de proteína metabolizável foi de 367,81; 393,59 e 391,63g, respectivamente, para animais com 300, 400 e 500kg de peso corporal. O valor de exigência líquida para mantença foi obtido por meio da regressão do logaritmo da produção de calor (PC), em função da ingestão de energia metabolizável, chegando-se ao valor de 75,6kcal/PVz0,75/dia. Concluiu-se que, devido ao aumento do teor de gordura na composição do ganho, animais de maior peso de corpo vazio apresentam maiores exigências líquidas de energia.

The objective of this study was to determine the energy and protein requirements for gain of Santa Gertrudis young bulls. Thirty-three 12-month-year-old animals, with initial body weight of 314.6±33.2kg, were kept in individual pens during 115 days, after 56 days of adaptation. Six animals were slaughtered after adaptation and determined the chemical composition of initial body. The concentrate proportion in the diet was 80%, on dry matter basis, and the levels of LPB studied were: 0, 4.5 or 9.0%. It was verified that the net energy requirement observed for weight gain of 1kg was 3.93, 4.88 and 5.76Mcal, and the metabolizable protein requirement was 367.81, 393.59 and 391.63g, respectively, for animals with 300, 400 and 500kg of body weight. The estimated maintenance energy requirement observed was 75.6kcal/LW0.75/day. The conclusion was thatbecause of the fat content in the gain composition, animalswith higher EBW have higher net energy requirements.

We have carried out van der Pauw resistivity and Hall effect measurements on a series of Molecular Beam Epitaxy InAs/GaAs superlattice samples containing InAs quantum dots. Three growth parameters were varied, the InAs coverage, the number of repetitions of the InAs/GaAs layers, and the GaAs spacer thickness. The results can be grouped in two sets, those samples presenting low and high resistivity. The group presenting low resistivity is composed by the samples with GaAs spacer of 30 monolayers (ML) and InAs coverage of 1.9 monolayers. The group presenting high resistivity is composed of samples with GaAs spacer of 40 ML. We claim that the high resistivity characteristic is due to the presence of deep level. Increasing the spacer from 30 to 40 ML decouples the InAs planes favouring the deep level formation.

We have carried out our experiments on a semi-insulating GaAs sample grown by low temperature Molecular Beam Epitaxy. Three parameters were used to fine tune the experiments, namely, temperature, illumination, and applied bias. We have used powerful tools of time series analysis in order to assess the embedding dimension through near false nearest neighbors. We have also measured the maximum Lyapunov exponent and the correlation dimension [1]. The main contribution was in presenting new experimental data and its analysis which presents self-generated chaos.

In this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200°C and 300°C. We vary the temperature and the illumination intensity. For the sample grown at 200°C, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric fields. Below 100K, a clear dependence of the threshold electric field with temperature was observed. The sample grown at 300°C shows a breakdown due to an acceptor level at 41meV from the valence band. The threshold electric field increases with illumination due to the generation of free electrons by deep levels. A similar behavior was also observed for a Cr doped GaAs sample.